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dual low voltage rail-to-rail output operational amplifiers azv358 data sheet 1 mar. 2010 rev. 1. 3 bcd semiconductor manufacturing limited general description the azv358 is dual low voltage (2.7-5.5v) operational amplifiers which have rail-to-rail output swing capability. the input common-mode voltage range includes ground. the chip exhibits excellent speed-power ratio, achieving 1mhz of bandwidth and 1v/ s of slew rate with low supply current. the azv358 is built with bicmos process. it has bipolar input and output stages for improved noise per- formance, low input offset voltage and higher output current drive. azv358 is available in th e package of tssop-8 and msop-8. the small packages save space on pc boards, and enable the de sign of small portable elec- tronic devices. it also allows the designer to place the device closer to the signal source to reduce noise pickup and increase signal integrity. azv358 is also available in standard soic-8 package. features for v cc =5v and v ee =0v, typical unless otherwise noted guaranteed 2.7v to 5.5v performance no crossover distortion gain-bandwidth product 1mhz industrial temperature range: -40 o c to +85 o c low supply current: 210 a rail-to-rail output swing under 10k ? load: v oh up to v cc -10mv v ol near to v ee +65mv v cm : -0.1v to v cc -0.8v applications active filters low power, low vo ltage applications general purpose portable devices cellular phone, cordless phone battery-powered systems figure 1. package types of azv358 soic-8 tssop-8 msop-8
dual low voltage rail-to-rail output operational amplifiers azv358 data sheet 2 mar. 2010 rev. 1. 3 bcd semiconductor manufacturing limited functional block diagram figure 2. pin configuration of azv358 (top view) figure 3. functional block di agram of azv358 (each block) pin configuration in- in+ v ee v cc output (soic-8/tssop-8/msop-8) m/g/mm package v bias1 v bias2 v bias3 output 1 in 1+ in 1- v ee v cc output 2 in 2- in 2+ 1 4 3 2 5 6 7 8
dual low voltage rail-to-rail output operational amplifiers azv358 data sheet 3 mar. 2010 rev. 1. 3 bcd semiconductor manufacturing limited parameter symbol value unit power supply voltage v cc 6v operation junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c lead temperature (sol dering, 10 seconds) t lead 260 o c esd (machine model) 200 v esd (human body model) 2000 v note 1: stresses greater than those listed under "absolute maximum ratings" may cause perm anent damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions be yond those indicated under "recommended operating conditions" is not implied. exposure to "absolute maximum ra tings" for extended periods may affect device reliability. absolute maximum ratings (note 1) recommended operating conditions parameter symbol min max unit supply voltage v cc 2.7 5.5 v ambient operating temperature range t a -40 85 o c ordering information package temperature range part number marking id packing type lead free green lead free green soic-8 -40 to 85 o c azv358m-e1 azv358m-g1 azv358m-e1 azv358m-g1 tube azv358mtr-e1 azv358mtr-g1 azv358m-e1 azv358m-g1 tape & reel tssop-8 -40 to 85 o c azv358g-e1 AZV358G-G1 eg3e gg3e tube azv358gtr-e1 azv358gtr-g1 eg3e gg3e tape & reel msop-8 -40 to 85 o c azv358mm-e1 azv358mm-g1 azv358mm-e1 azv358mm-g1 tube azv358mmtr-e1 azv358mmtr-g1 azv358mm-e1 azv358mm-g1 tape & reel circuit type package e1: lead free azv358 blank: tube g: tssop-8 - m: soic-8 mm: msop-8 tr: tape and reel g1: green bcd semiconductor's pb-free products, as desi gnated with "e1" suffix in the part num ber, are rohs compliant. products with "g1" suffix are available in green packages.
dual low voltage rail-to-rail output operational amplifiers azv358 data sheet 4 mar. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 2.7v electrical characteristics parameter symbol conditions min typ max unit input offset voltage v io 1.7 7 mv 9 input bias current i b 11 250 na 500 input offset current i io 550 na 150 input common mode voltage range v cm for cmrr 50db -0.1 1.9 v supply current i cc v o =v cc /2, a vcl =1, no load 140 340 a 420 common mode rejection ratio cmrr 0 v cm 1.7v 50 63 db power supply rejection ratio psrr 2.7v v cc 5v v o =1v, 50 60 db output short circuit current i source v o =0v 520 ma i sink v o =2.7v 10 30 ma output voltage swing v oh r l =10k ? to 1.35v 2.60 2.69 v v ol 60 180 mv gain bandwidth product gbwp c l =200pf 1mhz phase margin m 60 deg gain margin g m 10 db limits in standard typeface are for t a =25 o c, bold typeface applies over t a =-40 o c to 85 o c, v cc =2.7v, v ee =0v, v cm =1.0v, v o =v cc /2 and r l >1m ? , unless otherwise sp ecified. (note 2) note 2: limits over the full temperature are guaranteed by desi gn, but not tested in production.
dual low voltage rail-to-rail output operational amplifiers azv358 data sheet 5 mar. 2010 rev. 1. 3 bcd semiconductor manufacturing limited 5v electrical characteristics parameter symbol conditions min typ max unit input offset voltage v io 1.7 7 mv 9 input bias current i b 15 250 na 500 input offset current i io 550 na 150 input common mode voltage range v cm for cmrr 50db -0.1 4.2 v supply current i cc v o =v cc /2, a vcl =1, no load 210 440 a 615 large signal voltage gain g v r l =2k ? 84 100 db 80 common mode rejection ratio cmrr 0 v cm 4v 50 63 db power supply rejection ratio psrr 2.7v v cc 5v v o =1v, v cm =1v 50 60 db output short circuit current i source v o =0v 560 ma i sink v o =5v 10 160 ma output voltage swing v oh r l =2k ? to 2.5v 4.7 4.96 v 4.6 r l =10k ? to 2.5v 4.9 4.99 4.8 v ol r l =2k ? to 2.5v 120 300 mv 400 r l =10k ? to 2.5v 65 180 280 slew rate sr 1 v/ s gain bandwidth product gbwp c l =200pf 1mhz phase margin m 60 deg gain margin g m 10 db limits in standard typeface are for t a =25 o c, bold typeface applies over t a =-40 o c to 85 o c, v cc =5v, v ee =0v, v cm =2.0v, v o =v cc /2 and r l >1m ? , unless otherwise sp ecified. (note 2) note 2: limits over the full temperature are guaranteed by desi gn, but not tested in production.
dual low voltage rail-to-rail output operational amplifiers azv358 data sheet 6 mar. 2010 rev. 1. 3 bcd semiconductor manufacturing limited figure 4. supply current vs. supply voltage figure 5. supply current vs. temperature figure 6. slew rate vs. supply voltage figure 7. output short circuit current vs. supply voltage typical performance characteristics 2.53.03.54.04.55.05.5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 a v =1 v in =1vp-p r l =10k ? to 1/2v cc slew rate (v/ s) supply voltage (v) falling edge rising edge -40-20 0 20406080 100 120 140 160 180 200 220 240 260 280 300 v cc =2.7v v o =v cc /2 no load supply current ( a) temperature ( o c) v cc =5v 0123456 0 50 100 150 200 250 300 v o =v cc /2 no load t a = -40 o c t a =25 o c t a =85 o c supply current ( a) supply voltage (v) 2.5 3.0 3.5 4.0 4.5 5.0 5.5 10 20 30 40 50 60 v ee =0v v o short to v ee output short circuit current_i source (ma) supply voltage (v)
dual low voltage rail-to-rail output operational amplifiers azv358 data sheet 7 mar. 2010 rev. 1. 3 bcd semiconductor manufacturing limited figure 8. output short circuit current figure 9. output short circuit current typical performance ch aracteristics (continued) figure 10. output short circuit cu rrent figure 11. output voltage vs.temperature vs.output source current 0.1 1 10 100 1e-3 0.01 0.1 1 10 v cc =5v, v ee =0 v o - output voltage referenced to v cc (v) source current (ma) 2.5 3.0 3.5 4.0 4.5 5.0 5.5 0 20 40 60 80 100 120 140 160 v ee =0v v o short to v cc output short circuit current_i sink (ma) supply voltage (v) vs. supply voltage vs.temperature -40-20 0 20406080 0 10 20 30 40 50 60 70 80 90 100 v cc =2.7v v cc =5v v ee =0v v o to v ee output short circuit current _ i source (ma) temperature ( o c) -40.0 -20.0 0.0 20.0 40.0 60.0 80.0 0 20 40 60 80 100 120 140 160 180 200 v cc =2.7v v cc =5v temperature ( o c) v ee =0v v o to v cc output short circuit current_i sink (ma)
dual low voltage rail-to-rail output operational amplifiers azv358 data sheet 8 mar. 2010 rev. 1. 3 bcd semiconductor manufacturing limited figure 12 . output voltage vs.output source current figure 13. output voltage vs.output sink current typical performance ch aracteristics (continued) figure 14 . output voltage vs.output sink current figure 15. output voltage swing vs. supply voltage 0.1 1 10 100 0.1 1 10 v cc =5v v ee =0 output voltage (v) sink current (ma) 0.1 1 10 1e-3 0.01 0.1 1 10 v o -output voltage reference to v cc (v) v cc =2.7v v ee =0v source current (ma) 110 0.1 1 10 v cc =2.7v v ee =0v output voltage (v) sink current (ma) 2.53.03.54.04.55.05.5 0 10 20 30 40 50 60 70 80 90 100 negative swing_v ol positive swing_v cc -v oh r l =10k ? to v cc /2 output voltage swing (mv) supply voltage (v)
dual low voltage rail-to-rail output operational amplifiers azv358 data sheet 9 mar. 2010 rev. 1. 3 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 16. output voltage swing vs.te mperature figure 17. gain and phase vs. frequency and resistive load 10k 100k 1m -10 0 10 20 30 40 50 60 70 80 -20 0 20 40 60 80 100 gain v cc =2.5v, v ee =-2.5v c l =0 r l =620 ? r l =2k ? r l =100k ? open loop gain (db) frequency (hz) phase margin r l =620 ? r l =2k ? r l =100k ? phase margin (degree) figure 18. gain and phase vs. frequency and capacitive load figure 19. gain and phase vs. frequency and capacitive load 10k 100k 1m -20 -10 0 10 20 30 40 50 60 70 80 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 phase margin (degree) c l =100pf c l =200pf c l =1000pf gain v cc =2.5v v ee =-2.5v r l =100k ? open loop gain (db) frequency (hz) phase margin c l =100pf c l =200pf c l =1000pf 10k 100k 1m -30 -20 -10 0 10 20 30 40 50 60 70 80 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 c l =100pf c l =200pf c l =470pf c l =1000pf gain v cc =2.5v, v ee =-2.5v r l =620 ? open loop gain (db) frequency (hz) phase margin (degree) phase margin c l =100pf c l =200pf c l =470pf c l =1000pf -40-20 0 20406080 0 10 20 30 40 50 60 70 80 90 100 negative swing_v ol positive swing_v cc -v oh v cc =2.7v v cc =5v v cc =2.7v r l =10k ? to v cc /2 output voltage swing (mv) temperature ( o c) v cc =5v
dual low voltage rail-to-rail output operational amplifiers azv358 data sheet 10 mar. 2010 rev. 1. 3 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 20. thd+n vs. frequency 100 1k 10k 100k 1e-3 0.01 0.1 1 v o =2.5vp-p v cc =2.5v, v ee =-2.5v r l =10k ? a v =1 thd+n (%) frequency (hz) 20 v o =1vp-p figure 23. non-inverting input small signal response v in v out v cc =2.5v v ee =-2.5v c l =50pf, r l =2k ? v in =100mvp-p unity gain figure 22. non-inverting input large signal pulse response v cc =5v, v ee =0v r l =2k ? v in =1vp-p unity gain v in v out figure 21. non-inverting input small signal pulse response v cc =5v, v ee =0v r l =2k ? v in =100mvp-p unity gain v in v out
dual low voltage rail-to-rail output operational amplifiers azv358 data sheet 11 mar. 2010 rev. 1. 3 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 24. non-inverting input small signal response v out v in v cc =2.5v v ee =-2.5v c l =200pf, r l =2k ? v in =100mvp-p unity gain
dual low voltage rail-to-rail output operational amplifiers azv358 data sheet 12 mar. 2010 rev. 1. 3 bcd semiconductor manufacturing limited mechanical dimensions soic-8 unit: mm(inch) 0 8 1 5 r 0 . 1 5 0 ( 0 . 0 0 6 ) r0.150(0.006) 1.000(0.039) 0.330(0.013) 0.510(0.020) 1.350(0.053) 1.750(0.069) 0.100(0.004) 0.300(0.012) 0.900(0.035) 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 7 7 2 0 : 1 d 1.270(0.050) typ 0.190(0.007) 0.250(0.010) 8 d 5.800(0.228) 6.200(0.244) 0.675(0.027) 0.725(0.029) 0.320(0.013) 8 0.450(0.017) 0.800(0.031) 4.700(0.185) 5.100(0.201) note: eject hole, oriented hole and mold mark is optional.
dual low voltage rail-to-rail output operational amplifiers azv358 data sheet 13 mar. 2010 rev. 1. 3 bcd semiconductor manufacturing limited mechanical dimens ions (continued) tssop-8 unit: mm(inch) 4.300(0.169) 0.400(0.016) 0.190(0.007) 0.300(0.012) see detail a detail a 2.900(0.114) 0.050(0.002) 0.150(0.006) 1.200(0.047) max 1.950(0.077) 0 8 12 top & bottom r0.090(0.004) 0.450(0.018) 0.750(0.030) 1.000(0.039) 6.400(0.252) 0.800(0.031) 1.050(0.041) 0.090(0.004) 0.200(0.008) gage plane seating plane 0.250(0.010) 3.100(0.122) 4.500(0.177) typ 0.650(0.026) typ typ typ r0.090(0.004) ref note: eject hole, oriented hole and mold mark is optional.
dual low voltage rail-to-rail output operational amplifiers azv358 data sheet 14 mar. 2010 rev. 1. 3 bcd semiconductor manufacturing limited msop-8 unit: mm(inch) mechanical dimens ions (continued) 4.700(0.185) 0.650(0.026)typ 5.100(0.201) 0.410(0.016) 0.650(0.026) 0 . 0 0 0 ( 0 . 0 0 0 ) 0 . 2 0 0 ( 0 . 0 0 8 ) 0.300(0.012)typ 3 . 1 0 0 ( 0 . 1 2 2 ) 2 . 9 0 0 ( 0 . 1 1 4 ) 0 . 8 0 0 ( 0 . 0 3 1 ) 1 . 2 0 0 ( 0 . 0 4 7 ) 3.100(0.122) 2.900(0.114) 0 6 0 . 1 5 0 ( 0 . 0 0 6 ) t y p 0 . 7 6 0 ( 0 . 0 3 0 ) 0 . 9 7 0 ( 0 . 0 3 8 ) ` note: eject hole, oriented hole and mold mark is optional.
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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